SIHA12N60E-GE3
detaildesc

SIHA12N60E-GE3

Vishay Siliconix

Product No:

SIHA12N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220 Full Pack

Datasheet:

pdf

Description:

N-CHANNEL 600V

Quantity:

Delivery:

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Payment:

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In Stock : 506

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.6065

    $1.6065

  • 10

    $1.44585

    $14.4585

  • 50

    $1.2852

    $64.26

  • 100

    $1.12455

    $112.455

  • 500

    $1.09242

    $546.21

  • 1000

    $1.071

    $1071

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 937 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220 Full Pack
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 33W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)