SIHB11N80AE-GE3

Vishay Siliconix

Product No:

SIHB11N80AE-GE3

Manufacturer:

Package:

D²PAK (TO-263)

Datasheet:

Description:

MOSFET N-CH 800V 8A D2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	804 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	450mOhm @ 5.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D²PAK (TO-263)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	78W (Tc)
Series	E
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHB11