SIHF30N60E-GE3
detaildesc

SIHF30N60E-GE3

Vishay Siliconix

Product No:

SIHF30N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

-

Datasheet:

pdf

Description:

MOSFET N-CH 600V 29A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 2478

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.33125

    $4.33125

  • 10

    $3.898125

    $38.98125

  • 50

    $3.465

    $173.25

  • 100

    $3.031875

    $303.1875

  • 500

    $2.94525

    $1472.625

  • 1000

    $2.8875

    $2887.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 37W (Tc)
Series E
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHF30