SIHG21N60EF-GE3
detaildesc

SIHG21N60EF-GE3

Vishay Siliconix

Product No:

SIHG21N60EF-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-247AC

Datasheet:

pdf

Description:

MOSFET N-CH 600V 21A TO247AC

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 288

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.16575

    $3.16575

  • 10

    $2.849175

    $28.49175

  • 50

    $2.5326

    $126.63

  • 100

    $2.216025

    $221.6025

  • 500

    $2.15271

    $1076.355

  • 1000

    $2.1105

    $2110.5

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-247AC
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 227W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHG21