SIHP125N60EF-GE3
detaildesc

SIHP125N60EF-GE3

Vishay Siliconix

Product No:

SIHP125N60EF-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

MOSFET N-CH 600V 25A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 698

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.368453

    $3.368453

  • 10

    $3.031607

    $30.31607

  • 50

    $2.694762

    $134.7381

  • 100

    $2.357917

    $235.7917

  • 500

    $2.290548

    $1145.274

  • 1000

    $2.245635

    $2245.635

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1533 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 179W (Tc)
Series EF
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHP125