SIHP25N50E-BE3
detaildesc

SIHP25N50E-BE3

Vishay Siliconix

Product No:

SIHP25N50E-BE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

N-CHANNEL 500V

Quantity:

Delivery:

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Payment:

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In Stock : 2253

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.26989

    $2.26989

  • 10

    $2.042901

    $20.42901

  • 50

    $1.815912

    $90.7956

  • 100

    $1.588923

    $158.8923

  • 500

    $1.543525

    $771.7625

  • 1000

    $1.51326

    $1513.26

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 250W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube