SIJH112E-T1-GE3
detaildesc

SIJH112E-T1-GE3

Vishay Siliconix

Product No:

SIJH112E-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 8 x 8

Datasheet:

-

Description:

MOSFET N-CH 100V 23A/225A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 1170

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.254265

    $3.254265

  • 10

    $2.928838

    $29.28838

  • 50

    $2.603412

    $130.1706

  • 100

    $2.277986

    $227.7986

  • 500

    $2.2129

    $1106.45

  • 1000

    $2.16951

    $2169.51

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 225A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Package Tape & Reel (TR)
Base Product Number SIJH112