SIJH800E-T1-GE3
detaildesc

SIJH800E-T1-GE3

Vishay Siliconix

Product No:

SIJH800E-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 8 x 8

Datasheet:

pdf

Description:

N-CHANNEL 80-V (D-S) 175C MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 3313

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.425625

    $3.425625

  • 10

    $3.083063

    $30.83063

  • 50

    $2.7405

    $137.025

  • 100

    $2.397937

    $239.7937

  • 500

    $2.329425

    $1164.7125

  • 1000

    $2.28375

    $2283.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10230 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.55mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 3.3W (Ta), 333W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 8 x 8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 299A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)