SISS04DN-T1-GE3
detaildesc

SISS04DN-T1-GE3

Vishay Siliconix

Product No:

SISS04DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

MOSFET N-CH 30V 50.5A/80A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 3533

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.87696

    $0.87696

  • 10

    $0.789264

    $7.89264

  • 50

    $0.701568

    $35.0784

  • 100

    $0.613872

    $61.3872

  • 500

    $0.596333

    $298.1665

  • 1000

    $0.58464

    $584.64

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4460 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50.5A (Ta), 80A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +16V, -12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS04