SISS30ADN-T1-GE3
detaildesc

SISS30ADN-T1-GE3

Vishay Siliconix

Product No:

SISS30ADN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

-

Description:

MOSFET N-CH 80V 15.9A/54.7A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 5060

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.759308

    $0.759308

  • 10

    $0.683377

    $6.83377

  • 50

    $0.607446

    $30.3723

  • 100

    $0.531515

    $53.1515

  • 500

    $0.516329

    $258.1645

  • 1000

    $0.506205

    $506.205

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1295 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.9mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15.9A (Ta), 54.7A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS30