SISS5623DN-T1-GE3
detaildesc

SISS5623DN-T1-GE3

Vishay Siliconix

Product No:

SISS5623DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

P-CHANNEL 60 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 7237

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.11321

    $1.11321

  • 10

    $1.001889

    $10.01889

  • 50

    $0.890568

    $44.5284

  • 100

    $0.779247

    $77.9247

  • 500

    $0.756983

    $378.4915

  • 1000

    $0.74214

    $742.14

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1575 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 24mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.6V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc)
Series -
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 36.3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS5623