SISS63DN-T1-GE3
Vishay Siliconix
Product No:
SISS63DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Datasheet:
Description:
MOSFET P-CH 20V 35.1/127.5A PPAK
Quantity:
Delivery:
Payment:
In Stock : 28808
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.609
$0.609
10
$0.532875
$5.32875
50
$0.45675
$22.8375
100
$0.418687
$41.8687
500
$0.399656
$199.828
1000
$0.380625
$380.625
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7080 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 236 nC @ 8 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 15A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 5W (Ta), 65.8W (Tc) |
| Series | TrenchFET® Gen III |
| Package / Case | PowerPAK® 1212-8S |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 35.1A (Ta), 127.5A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SISS63 |
SISS63DN-T1-GE3 Related Blog
2000+Daily average RFQ Volume
300,000Standard Product Unit
280+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback