SPB02N60C3
Infineon Technologies
Product No:
SPB02N60C3
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 7286
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.80325
$0.80325
10
$0.722925
$7.22925
50
$0.6426
$32.13
100
$0.562275
$56.2275
500
$0.54621
$273.105
1000
$0.5355
$535.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 25W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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