SPB03N60C3
detaildesc

SPB03N60C3

Infineon Technologies

Product No:

SPB03N60C3

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 5040

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.756

    $0.756

  • 10

    $0.6804

    $6.804

  • 50

    $0.6048

    $30.24

  • 100

    $0.5292

    $52.92

  • 500

    $0.51408

    $257.04

  • 1000

    $0.504

    $504

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.9V @ 135µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 38W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk