
Infineon Technologies
Product No:
SPB04N50C3
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.008
$1.008
10
$0.9072
$9.072
50
$0.8064
$40.32
100
$0.7056
$70.56
500
$0.68544
$342.72
1000
$0.672
$672
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 50W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |