Infineon Technologies
Product No:
SPB21N50C3ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 560V 21A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.633085
$2.633085
10
$2.369776
$23.69776
50
$2.106468
$105.3234
100
$1.84316
$184.316
500
$1.790498
$895.249
1000
$1.75539
$1755.39
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 560 V |
Power Dissipation (Max) | 208W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | SPB21N50 |