SPD02N80C3ATMA1
detaildesc

SPD02N80C3ATMA1

Infineon Technologies

Product No:

SPD02N80C3ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 800V 2A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 2634

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.707963

    $0.707963

  • 10

    $0.637166

    $6.37166

  • 50

    $0.56637

    $28.3185

  • 100

    $0.495574

    $49.5574

  • 500

    $0.481415

    $240.7075

  • 1000

    $0.471975

    $471.975

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.9V @ 120µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 42W (Tc)
Series CoolMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SPD02N80