Infineon Technologies
Product No:
SPD04N80C3ATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 800V 4A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.96516
$0.96516
10
$0.868644
$8.68644
50
$0.772128
$38.6064
100
$0.675612
$67.5612
500
$0.656309
$328.1545
1000
$0.64344
$643.44
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.9V @ 240µA |
Supplier Device Package | PG-TO252-3 |
Drain to Source Voltage (Vdss) | 800 V |
Power Dissipation (Max) | 63W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | SPD04N80 |