SPD06N80C3ATMA1
detaildesc

SPD06N80C3ATMA1

Infineon Technologies

Product No:

SPD06N80C3ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 800V 6A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 3110

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.243935

    $1.243935

  • 10

    $1.119541

    $11.19541

  • 50

    $0.995148

    $49.7574

  • 100

    $0.870755

    $87.0755

  • 500

    $0.845876

    $422.938

  • 1000

    $0.82929

    $829.29

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 900mOhm @ 3.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.9V @ 250µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 83W (Tc)
Series CoolMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SPD06N80