SPD30N03S2L-07 G
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SPD30N03S2L-07 G

Infineon Technologies

Product No:

SPD30N03S2L-07 G

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 1253

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.882

    $0.882

  • 10

    $0.7938

    $7.938

  • 50

    $0.7056

    $35.28

  • 100

    $0.6174

    $61.74

  • 500

    $0.59976

    $299.88

  • 1000

    $0.588

    $588

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.7mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 85µA
Supplier Device Package PG-TO252-3-313
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 136W (Tc)
Series CoolMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk