SPD50N03S2-07 G
detaildesc

SPD50N03S2-07 G

Infineon Technologies

Product No:

SPD50N03S2-07 G

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 1304

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.1655

    $1.1655

  • 10

    $1.04895

    $10.4895

  • 50

    $0.9324

    $46.62

  • 100

    $0.81585

    $81.585

  • 500

    $0.79254

    $396.27

  • 1000

    $0.777

    $777

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2170 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 46.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.3mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 85µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 136W (Tc)
Series OptiMOS®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk