SPI07N60S5IN
detaildesc

SPI07N60S5IN

Infineon Technologies

Product No:

SPI07N60S5IN

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 218

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.323

    $1.323

  • 10

    $1.1907

    $11.907

  • 50

    $1.0584

    $52.92

  • 100

    $0.9261

    $92.61

  • 500

    $0.89964

    $449.82

  • 1000

    $0.882

    $882

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 970 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5.5V @ 350µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 83W (Tc)
Series CoolMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk