SPP11N60C3XKSA1

Infineon Technologies

Product No:

SPP11N60C3XKSA1

Manufacturer:

Package:

PG-TO220-3-1

Datasheet:

Description:

LOW POWER_LEGACY

Quantity:

Delivery:

Payment:

In Stock : 829

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 500µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	125W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk