SPP18P06PHXKSA1

Infineon Technologies

Product No:

SPP18P06PHXKSA1

Manufacturer:

Package:

PG-TO220-3

Datasheet:

Description:

MOSFET P-CH 60V 18.7A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	81.1W (Ta)
Series	SIPMOS®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18.7A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPP18P06