SQD40061EL-T4_GE3
detaildesc

SQD40061EL-T4_GE3

Vishay Siliconix

Product No:

SQD40061EL-T4_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-252AA

Datasheet:

pdf

Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

Quantity:

Delivery:

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In Stock : 1566

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.488848

    $1.488848

  • 10

    $1.339963

    $13.39963

  • 50

    $1.191078

    $59.5539

  • 100

    $1.042193

    $104.2193

  • 500

    $1.012416

    $506.208

  • 1000

    $0.992565

    $992.565

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.1mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 107W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)