SQJ168ELP-T1_GE3
detaildesc

SQJ168ELP-T1_GE3

Vishay Siliconix

Product No:

SQJ168ELP-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Quantity:

Delivery:

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Payment:

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In Stock : 4734

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.468888

    $0.468888

  • 10

    $0.410277

    $4.10277

  • 50

    $0.351666

    $17.5833

  • 100

    $0.322361

    $32.2361

  • 500

    $0.307708

    $153.854

  • 1000

    $0.293055

    $293.055

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 36mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 29.4W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)