SQJ409EP-T2_GE3
detaildesc

SQJ409EP-T2_GE3

Vishay Siliconix

Product No:

SQJ409EP-T2_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

Quantity:

Delivery:

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In Stock : 10332

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.848925

    $0.848925

  • 10

    $0.764033

    $7.64033

  • 50

    $0.67914

    $33.957

  • 100

    $0.594248

    $59.4248

  • 500

    $0.577269

    $288.6345

  • 1000

    $0.56595

    $565.95

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 68W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)