SQJ431AEP-T1_BE3
detaildesc

SQJ431AEP-T1_BE3

Vishay Siliconix

Product No:

SQJ431AEP-T1_BE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

P-CHANNEL 200-V (D-S) 175C MOSFE

Quantity:

Delivery:

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Payment:

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In Stock : 3612

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.040603

    $1.040603

  • 10

    $0.936542

    $9.36542

  • 50

    $0.832482

    $41.6241

  • 100

    $0.728422

    $72.8422

  • 500

    $0.70761

    $353.805

  • 1000

    $0.693735

    $693.735

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 305mOhm @ 3.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 68W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)