SQJA12EP-T1_GE3

Vishay Siliconix

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SQJA12EP-T1_GE3

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N-CHANNEL 100-V (D-S) 175C MOSFE

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In Stock : 1991

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Operating Temperature	-55°C ~ 125°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3635 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	49.1 nC @ 10 V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	-
Series	-
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	-
Mfr	Vishay Siliconix
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)