SQJQ112ER-T1_GE3
detaildesc

SQJQ112ER-T1_GE3

Vishay Siliconix

Product No:

SQJQ112ER-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 8 x 8

Datasheet:

pdf

Description:

AUTOMOTIVE N-CHANNEL 100 V (D-S)

Quantity:

Delivery:

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Payment:

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In Stock : 1818

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.731995

    $2.731995

  • 10

    $2.458795

    $24.58795

  • 50

    $2.185596

    $109.2798

  • 100

    $1.912397

    $191.2397

  • 500

    $1.857757

    $928.8785

  • 1000

    $1.82133

    $1821.33

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 15945 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 272 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.53mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 600W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case 8-PowerSMD, Gull Wing
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 296A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)