SQS966ENW-T1_GE3
Vishay Siliconix
Product No:
SQS966ENW-T1_GE3
Manufacturer:
Package:
PowerPAK® 1212-8W Dual
Datasheet:
Description:
MOSFET N-CHAN 60V
Quantity:
Delivery:
Payment:
In Stock : 6434
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.596736
$0.596736
10
$0.522144
$5.22144
50
$0.447552
$22.3776
100
$0.410256
$41.0256
500
$0.391608
$195.804
1000
$0.37296
$372.96
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Mounting Type | Surface Mount, Wettable Flank |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8W Dual |
| Drain to Source Voltage (Vdss) | 60V |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | PowerPAK® 1212-8W Dual |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27.8W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Mfr | Vishay Siliconix |
| Package | Tape & Reel (TR) |
| Base Product Number | SQS966 |
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