SSM3J09FU,LF

Toshiba Semiconductor and Storage

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SSM3J09FU,LF

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USM

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Description:

MOSFET P-CH 30V 200MA USM

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	22 pF @ 5 V
FET Type	P-Channel
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.7Ohm @ 100mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.8V @ 100µA
Supplier Device Package	USM
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	150mW (Ta)
Series	-
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3J09