SSM3J145TU,LXHF
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SSM3J145TU,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3J145TU,LXHF

Package:

UFM

Datasheet:

-

Description:

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Quantity:

Delivery:

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Payment:

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In Stock : 4246

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.126

    $0.126

  • 10

    $0.11025

    $1.1025

  • 50

    $0.0945

    $4.725

  • 100

    $0.086625

    $8.6625

  • 500

    $0.082688

    $41.344

  • 1000

    $0.07875

    $78.75

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 103mOhm @ 1A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package UFM
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 500mW (Ta)
Series Automotive, AEC-Q101, U-MOSVI
Package / Case 3-SMD, Flat Leads
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) +6V, -8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)