SSM3J375F,LXHF

Toshiba Semiconductor and Storage

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SSM3J375F,LXHF

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S-Mini

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Description:

AECQ MOSFET PCH -20V -2A SOT346

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	150mOhm @ 1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	S-Mini
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	600mW (Ta)
Series	Automotive, AEC-Q101, U-MOSVI
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+6V, -8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)