SSM3K09FU,LF

Toshiba Semiconductor and Storage

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SSM3K09FU,LF

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USM

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Description:

MOSFET N-CH 30V 400MA USM

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	20 pF @ 5 V
FET Type	N-Channel
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	700mOhm @ 200MA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.8V @ 100µA
Supplier Device Package	USM
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	150mW (Ta)
Series	π-MOSVI
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3K09