SSM3K376R,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3K376R,LXHF

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Package:

SOT-23F

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Description:

SMOS LOW RON NCH ID: 4A VDSS: 30

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	56mOhm @ 2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	SOT-23F
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta)
Series	Automotive, AEC-Q101
Package / Case	SOT-23-3 Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+12V, -8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)