SSM3K62TU,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3K62TU,LXHF

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Package:

UFM

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Description:

SMOS LOW RON NCH VDSS:20V ID:0.8

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	177 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	57mOhm @ 800mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	UFM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	Automotive, AEC-Q101, U-MOSVII-H
Package / Case	3-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)