SSM3K72KFS,LXHF

Toshiba Semiconductor and Storage

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SSM3K72KFS,LXHF

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Package:

SSM

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Description:

AUTO AEC-Q LOW RDSON SS MOS N-CH

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5Ohm @ 100mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 250µA
Supplier Device Package	SSM
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	150mW (Ta)
Series	U-MOSVII-H
Package / Case	SC-75, SOT-416
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)