STB35N65DM2
detaildesc

STB35N65DM2

STMicroelectronics

Product No:

STB35N65DM2

Manufacturer:

STMicroelectronics

Package:

D²PAK

Datasheet:

pdf

Description:

MOSFET N-CH 650V 28A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 413

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.031179

    $3.031179

  • 10

    $2.728061

    $27.28061

  • 50

    $2.424943

    $121.24715

  • 100

    $2.121825

    $212.1825

  • 500

    $2.061201

    $1030.6005

  • 1000

    $2.020786

    $2020.786

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package D²PAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 210W (Tc)
Series MDmesh™ M2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB35