STW65N045M9-4

STMicroelectronics

Product No:

STW65N045M9-4

Manufacturer:

Package:

TO-247-4

Datasheet:

Description:

N-CHANNEL 650 V, 39 MOHM TYP., 5

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4610 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	45mOhm @ 28A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.2V @ 250µA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	312W (Tc)
Series	-
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube