TK10A60W5,S5VX
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TK10A60W5,S5VX

Toshiba Semiconductor and Storage

Product No:

TK10A60W5,S5VX

Package:

TO-220SIS

Datasheet:

-

Description:

MOSFET N-CH 600V 9.7A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 42

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.299375

    $1.299375

  • 10

    $1.169437

    $11.69437

  • 50

    $1.0395

    $51.975

  • 100

    $0.909562

    $90.9562

  • 500

    $0.883575

    $441.7875

  • 1000

    $0.86625

    $866.25

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 450mOhm @ 4.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 500µA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 30W (Tc)
Series DTMOSIV
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK10A60