TK10J80E,S1E

Toshiba Semiconductor and Storage

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TK10J80E,S1E

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Package:

TO-3P(N)

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Description:

MOSFET N-CH 800V 10A TO3P

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	250W (Tc)
Series	π-MOSVIII
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK10J80