TK11S10N1L,LXHQ

Toshiba Semiconductor and Storage

Product No:

TK11S10N1L,LXHQ

Manufacturer:

Package:

DPAK+

Datasheet:

Description:

MOSFET N-CH 100V 11A DPAK

Quantity:

Delivery:

Payment:

In Stock : 2885

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	28mOhm @ 5.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	DPAK+
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	65W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK11S10