TK12P50W,RQ

Toshiba Semiconductor and Storage

Product No:

TK12P50W,RQ

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Package:

DPAK

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Description:

PB-F POWER MOSFET TRANSISTOR DPA

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	340mOhm @ 5.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 600µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	100W (Tc)
Series	DTMOSIV
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)