TK160F10N1,LXGQ

Toshiba Semiconductor and Storage

Product No:

TK160F10N1,LXGQ

Manufacturer:

Package:

TO-220SM(W)

Datasheet:

Description:

MOSFET N-CH 100V 160A TO220SM

Quantity:

Delivery:

Payment:

In Stock : 2278

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	8510 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	121 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SM(W)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	375W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK160F10