TK16A60W5,S4VX
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TK16A60W5,S4VX

Toshiba Semiconductor and Storage

Product No:

TK16A60W5,S4VX

Package:

TO-220SIS

Datasheet:

-

Description:

MOSFET N-CH 600V 15.8A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.89

    $1.89

  • 10

    $1.701

    $17.01

  • 50

    $1.512

    $75.6

  • 100

    $1.323

    $132.3

  • 500

    $1.2852

    $642.6

  • 1000

    $1.26

    $1260

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 40W (Tc)
Series DTMOSIV
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK16A60