TK25V60X5,LQ

Toshiba Semiconductor and Storage

Product No:

TK25V60X5,LQ

Manufacturer:

Package:

4-DFN-EP (8x8)

Datasheet:

Description:

PB-F POWER MOSFET TRANSISTOR DTM

Quantity:

Delivery:

Payment:

In Stock : 1964

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	150mOhm @ 7.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 1.2mA
Supplier Device Package	4-DFN-EP (8x8)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	180W (Tc)
Series	DTMOSIV
Package / Case	4-VSFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)