TK2P90E,RQ
detaildesc

TK2P90E,RQ

Toshiba Semiconductor and Storage

Product No:

TK2P90E,RQ

Package:

DPAK

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR DPA

Quantity:

Delivery:

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Payment:

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In Stock : 4115

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.838687

    $0.838687

  • 10

    $0.754819

    $7.54819

  • 50

    $0.67095

    $33.5475

  • 100

    $0.587081

    $58.7081

  • 500

    $0.570307

    $285.1535

  • 1000

    $0.559125

    $559.125

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.9Ohm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 200µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 900 V
Power Dissipation (Max) 80W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)