TK31V60X,LQ
detaildesc

TK31V60X,LQ

Toshiba Semiconductor and Storage

Product No:

TK31V60X,LQ

Package:

4-DFN-EP (8x8)

Datasheet:

-

Description:

MOSFET N-CH 600V 30.8A 4DFN

Quantity:

Delivery:

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Payment:

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In Stock : 8333

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.6935

    $4.6935

  • 10

    $4.22415

    $42.2415

  • 50

    $3.7548

    $187.74

  • 100

    $3.28545

    $328.545

  • 500

    $3.19158

    $1595.79

  • 1000

    $3.129

    $3129

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 98mOhm @ 9.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Supplier Device Package 4-DFN-EP (8x8)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 240W (Tc)
Series DTMOSIV-H
Package / Case 4-VSFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK31V60