TK4P60D,RQ
detaildesc

TK4P60D,RQ

Toshiba Semiconductor and Storage

Product No:

TK4P60D,RQ

Package:

DPAK

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR DP(

Quantity:

Delivery:

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Payment:

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In Stock : 2454

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6048

    $0.6048

  • 10

    $0.5292

    $5.292

  • 50

    $0.4536

    $22.68

  • 100

    $0.4158

    $41.58

  • 500

    $0.3969

    $198.45

  • 1000

    $0.378

    $378

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7Ohm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 1mA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 100W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)